Epitaxial EPI Polished Sapphire Substrates

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Epitaxial EPI polished sapphire substrate or wafer surface can be compared to surface finish that would be suitable for monocrystaline silicon epitaxial layer deposition in semiconductor device manufacturing:

EPI finish on sapphire has become to mean that the finish shall be 3 Angstroms Ra or less.

A common EPI polished sapphire substrate requirement is for manufacture of bright blue and green LEDs.

The tightest tolerance ultra-flat Blue and Green LED 2 in. (50.8 mm) polished Optical Grade Monocrystaline sapphire wafers:

Orientation C-plane (0001) ±0.1 deg.
Diameter 50.8 ±0.05 mm (2 ±0.002 in.)
Thickness 330 ±10 microns or 430 ±10 microns
Thickness variation - TTV less than 10 microns
Bow less than 15 microns
Surface finish EPI polish - less than 3 Angstroms
Flatness (restrained) less than 5 microns
Primary flat 16 ±0.5 mm
Primary flat orientation A-plane (1120) ±0.5 deg.

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Updated: 27 September 2008

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