Epitaxial EPI polished sapphire substrate or wafer surface can be compared to surface finish that would be suitable for monocrystaline silicon epitaxial layer deposition in semiconductor device manufacturing:
EPI finish on sapphire has become to mean that the finish shall be 3 Angstroms Ra or less.
A common EPI polished sapphire substrate requirement is for manufacture of bright blue and green LEDs.
The tightest tolerance ultra-flat Blue and Green LED 2 in. (50.8 mm) polished Optical Grade Monocrystaline sapphire wafers:
| Orientation | C-plane (0001) ±0.1 deg. |
| Diameter | 50.8 ±0.05 mm (2 ±0.002 in.) |
| Thickness | 330 ±10 microns or 430 ±10 microns |
| Thickness variation - TTV | less then 10 microns |
| Bow | less than 15 microns |
| Surface finish | EPI polish - less than 3 Angstroms |
| Flatness (restrained) | less than 5 microns |
| Primary flat | 16 ±0.5 mm |
| Primary flat orientation | A-plane (1120) ±0.5 deg. |
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