Direct Bond Copper on Aluminum Nitride Substrates

DBC is a process where solid Copper foil is bonded to AlN substrate at a high temperature in an inert atmosphere. These DBC substrates can have Copper thickness from 0.001" (25 microns) to 0.012" (300 microns) and can be nickel or gold plated if required.

Why Aluminum Nitride substrates with DBC?

• Electrical conductivity 95% of pure Copper
• High metal to substrate thermal conductivity
• Substrate with high thermal conductivity
• Can be nickel and gold plated for wire bonding and die attachment
• Solderable
• Large size up to 5 x 7 inches
• Compatible with thick film Copper technology
• Wide range of Copper thickness 25 to 300 microns
• Can be patterned by etching

Thermal management related Web sites:

• www.aluminumnitride.com/beo-aln BeO and AlN substrates

Return to Home Page: Aluminum nitride substrates, aluminum nitride wafers

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Updated: 27 September 2008

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